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Power Transistors
2SD1750, 2SD1750A
Silicon NPN triple diffusion planar type Darlington
For midium speed power switching Complementary to 2SB1180 and 2SB1180A
Unit: mm
7.00.3 3.00.2 3.50.2
s Features
q q q
High foward current transfer ratio hFE High-speed switching I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25C)
Ratings 60 80 60 80 7 12 8 15 1.3 150 -55 to +150 Unit V
7.20.3
0.80.2
1.10.1
0.850.1 0.40.1
1.00.2
10.0 -0.
+0.3
0.750.1
2.30.2 4.60.4 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1750 2SD1750A 2SD1750 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1:Base 2:Collector 3:Emitter I Type Package
3.50.2 2.00.2
7.00.3
Unit: mm
0 to 0.15
3.00.2
7.20.3 1.0 max.
Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature
V A A
10.20.3
2.5
0.750.1 1.10.1
0.5 max.
0.90.1 0 to 0.15
W
1 2 3
C C
2.30.2 4.60.4
1:Base 2:Collector 3:Emitter I Type Package (Y)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1750 2SD1750A 2SD1750 2SD1750A
(TC=25C)
Symbol ICBO IEBO VCEO hFE1* hFE2 VCE(sat) VBE(sat) fT ton tstg tf IC = 4A, IB1 = 8mA, IB2 = -8mA Conditions VCB = 60V, IE = 0 VCB = 80V, IE = 0 VEB = 7V, IC = 0 IC = 30mA, IB = 0 VCE = 3V, IC = 4A VCE = 3V, IC = 8A IC = 4V, IB = 8mA IC = 4V, IB = 8mA VCE = 10V, IC = 0.5A, f = 1MHz 20 0.5 4 1 60 80 2000 500 1.5 2 V V MHz s s s 10000 min typ max 100 100 2 Unit A mA V
Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h FE1
Rank classification
Q P
Internal Connection
B
C
Rank hFE1
2000 to 5000 4000 to 10000
E
2.50.2
1.0
2.50.2
1.0
emitter voltage 2SD1750A
V
1
Power Transistors
PC -- Ta
20 12 (1) TC=Ta (2) Without heat sink (PC=1.3W) TC=25C 10
2SD1750, 2SD1750A
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
10
VCE(sat) -- IC
(1) IC/IB=250 (2) IC/IB=500 (3) IC/IB=1000 TC=25C (3) (2) (1)
Collector power dissipation PC (W)
Collector current IC (A)
15
(1)
3
8 IB=4.0mA 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA 2
1
10
6
0.3
4
0.1
5
0.03
(2) 0 0 20 40 60 80 100 120 140 160 0 0 1 2 3 4 5
0.01 0.1
0.3
1
3
10
30
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
10 IC/IB=500 TC=100C 3 25C -25C
VBE(sat) -- IC
100000
hFE -- IC
IC/IB=500 VCE=3V
Base to emitter saturation voltage VBE(sat) (V)
10
Forward current transfer ratio hFE
30000
TC=100C 25C -25C
3 TC=-25C 1 100C 25C
10000
1
3000 1000 300 100 30 10 0.1
0.3
0.3
0.1
0.1
0.03
0.03
0.01 0.1
0.3
1
3
10
30
0.01 0.1
0.3
1
3
10
30
0.3
1
3
10
30
100
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Area of safe operation (ASO)
100 30 103 Non repetitive pulse TC=25C ICP IC 3 1 0.3 0.1 0.03 0.01 1 3 10 30 300ms 1ms t=10ms
Rth(t) -- t
(1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink
Thermal resistance Rth(t) (C/W)
Collector current IC (A)
10
102
(1) (2)
10
1
2SD1750A
2SD1750
100
300
1000
10-1 10-4
10-3
10-2
10-1
1
10
102
103
104
Collector to emitter voltage VCE
(V)
Time t (s)
2

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